A leading developer and manufacturer of compound semiconductor devices and MEMS now requires a GaN Process Development Engineer to join their team in the North East.
We are looking for high-calibre individuals to join the business, to help share in its future and build presence in the marketplace. In joining a dynamic and highly skilled team, you would be part of their growth story.
We are keen to hear from self-motivated individuals with cleanroom experience in manufacturing specialist active electronic devices based on compound semiconductors and MEMS.
Working mainly in the Cleanroom, the GaN Process Development Engineer role is a hands-on role developing compound semiconductor devices.
Your primary responsibilities and duties are as follows:
Experience:
To succeed in this role, you will have at least 3 years’ experience working in cleanroom fabrication, including significant hands-on experience in fabricating compound semiconductor or MEMS devices, including lithography (e-beam and/or stepper experience required); etch (wet & dry); deposition (dielectric, metal, and electroplating); Mask layout design experience; Failure Analysis and Surface Analytical Techniques; Wafer dicing, wire bonding, and package design.
You should have a good knowledge and understanding of GaN devices in particular transistors / MMICs, and materials (device physics, processing, measurements, modelling, simulation)
Qualifications:
You should be qualified to Degree or Ph.D. Level in Electronics Engineering, Physics, Chemistry, Material Science, or related discipline
Additional Information:
Candidates MUST be eligible to work and live in the UK. Copies of Visa and Passport will be requested.
Skills: Semiconductor, Fabrication, Clean Room, GaN, Lithography, Wet Etch, Dry Etch, Deposition, FAE, Wafer Dicing, Wire Bonding, Package Design.
To Apply Direct: Please send CV & Covering Letter to Iona Mulligan [email protected]