GaN Process Development Engineer – IM3227 FULL TIME, PERMANENT

A leading developer and manufacturer of compound semiconductor devices and MEMS now requires a GaN Process Development Engineer to join their team in the North East.

We are looking for high-calibre individuals to join the business, to help share in its future and build presence in the marketplace. In joining a dynamic and highly skilled team, you would be part of their growth story.

We are keen to hear from self-motivated individuals with cleanroom experience in manufacturing specialist active electronic devices based on compound semiconductors and MEMS.

Working mainly in the Cleanroom, the GaN Process Development Engineer role is a hands-on role developing compound semiconductor devices.

Your primary responsibilities and duties are as follows:

• Fabricate batches of wafers with MMIC, active and passive devices on GaN on SiC/Si/Sapphire throughout the full process flow including e-beam, stepper and contact lithography, metallisation, dry and wet etch, and DC & RF test.
• Work closely with the advanced process development engineers to define new process requirements and targets, design/integrate wafer fab process flows.
• Create test structure layouts to fabricate and characterise new device technologies and demonstrate margin for volume manufacturing.
• Specify critical in-line and PCM process control metrics for high volume manufacturing.
• Define test conditions and conduct wafer-scale DC/RF testing of PCM structures and discrete active devices.
• Conduct RF testing of discrete HEMTs, passives. Develop appropriate device models and perform device simulation.
• Interpret the above test results and support the development of 0.5μm and 0.25μm Process Design Kits (PDKs).
• Participate in on-going continuous yield/performance efforts and establish PDKs for GaN devices.
• Implement new quality techniques and actively participate in resolving quality issues.

Experience:

To succeed in this role, you will have at least 3 years’ experience working in cleanroom fabrication, including significant hands-on experience in fabricating compound semiconductor or MEMS devices, including lithography (e-beam and/or stepper experience required); etch (wet & dry); deposition (dielectric, metal, and electroplating); Mask layout design experience; Failure Analysis and Surface Analytical Techniques; Wafer dicing, wire bonding, and package design.

You should have a good knowledge and understanding of GaN devices in particular transistors / MMICs, and materials (device physics, processing, measurements, modelling, simulation)

Qualifications:

You should be qualified to Degree or Ph.D. Level in Electronics Engineering, Physics, Chemistry, Material Science, or related discipline

Additional Information:

Candidates MUST be eligible to work and live in the UK. Copies of Visa and Passport will be requested.

Skills: Semiconductor, Fabrication, Clean Room, GaN, Lithography, Wet Etch, Dry Etch, Deposition, FAE, Wafer Dicing, Wire Bonding, Package Design.

To Apply Direct: Please send CV & Covering Letter to Iona Mulligan [email protected]