A leading developer and manufacturer of compound semiconductor devices and MEMS now requires a GaN Process Development Engineer to join their team in the North East.
We are looking for high-calibre individuals to join the business, to help share in its future and build presence in the marketplace. In joining a dynamic and highly skilled team, you would be part of their growth story.
We are keen to hear from self-motivated individuals with cleanroom experience in manufacturing specialist active electronic devices based on compound semiconductors and MEMS.
Working mainly in the Cleanroom, the GaN Process Development Engineer role is a hands-on role developing compound semiconductor devices.
Your primary responsibilities and duties are as follows:
To succeed in this role, you will have at least 3 years’ experience working in cleanroom fabrication, including significant hands-on experience in fabricating compound semiconductor or MEMS devices, including lithography (e-beam and/or stepper experience required); etch (wet & dry); deposition (dielectric, metal, and electroplating); Mask layout design experience; Failure Analysis and Surface Analytical Techniques; Wafer dicing, wire bonding, and package design.
You should have a good knowledge and understanding of GaN devices in particular transistors / MMICs, and materials (device physics, processing, measurements, modelling, simulation)
You should be qualified to Degree or Ph.D. Level in Electronics Engineering, Physics, Chemistry, Material Science, or related discipline
Candidates MUST be eligible to work and live in the UK. Copies of Visa and Passport will be requested.
Skills: Semiconductor, Fabrication, Clean Room, GaN, Lithography, Wet Etch, Dry Etch, Deposition, FAE, Wafer Dicing, Wire Bonding, Package Design.
To Apply Direct: Please send CV & Covering Letter to Iona Mulligan [email protected]